SK Hynix unveiled its HBM2E DRAM today with industry-leading bandwidth by 50% and twice as much capacity as compared to last gen. The new HBM2E standard supports over 460GB/s bandwidth based on 3.6 GB/s performance per pin with 1,024 data I/Os

SK Hynix achieves this feat by making use of TSV (Through Silicon Via) technology to vertically stack a maximum of 8 16Gb chips, resulting in a dense bundle of 16GB of data. HBM2E is interconnected closely with GPUs and logic chips, separated by only a few micro-meters, resulting in faster and more efficient data transfer. It is built from the ground-up to support supercomputers, high-end GPUs, machine learning and AI systems which require the highest level of memory performance.

SK Hynix HBM2E

For the sake of comparison, the RTX 2080 with 8GB GDDR6 of memory delivers 448GB/s of bandwidth while the new HBM2E memory offers twice as much capacity with a significant increase in performance at the same time. The current GPU which offers the highest memory bandwidth is the AMD Radeon VII at 1,024 GB/s. Using SK Hynix’s new memory, it can offer up to 1,840GB/s of bandwidth, making it faster by almost 80%.

The first SK Hynix HBM2E chips will begin mass production in 2020, at the start of the 4th Industrial Era.

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